Simulation Study of Nanoscale FDSOI MOSFET Characteristics
نویسندگان
چکیده
Silicon on insulator (SOI) technology permits a good solution to the miniaturization as MOSFET size scales down. This paper is about compare electrical performance of nanoscale FD-SOI at various gate lengths. The compared and contrasted with help threshold voltage, subthreshold slope, on-state current leakage current. Interestingly, by decreasing length, are increased but voltage decreased sub-threshold slope degraded. Silvaco two-dimensional simulations used analyze proposed structures.
منابع مشابه
Evaluation of Optically Illuminated Mosfet Characteristics by Tcad Simulation
In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENATM process simulator and the device simulation is performed using ATLASTM from SILVACO i...
متن کاملImpact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...
متن کاملComprehensive Simulation Study of Statistical Variability in 32nm SOI MOSFET
1. Abstract We have studied the statistical variability (SV) in thinbody silicon-on-insulator (TBSOI) MOSFETs with high-κ/metal gate stacks. We have considered the impact of the gate workfunction variation (WFV) in conjunction with random discrete dopants (RDD) and trapped interface charges. The simulations were carried with the Glasgow 3D ’atomistic’ simulator GARAND. Results for both threshol...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Soft nanoscience letters
سال: 2023
ISSN: ['2160-0740', '2160-0600']
DOI: https://doi.org/10.4236/snl.2023.133002